MMUN2111LT1

Transistors - Bipolar (BJT) - Single, Pre-Biased

Manufacturer No:
MMUN2111LT1
Manufacture:
ON Semiconductor
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
MMUN2111LT1
Description:
TRANS PREBIAS PNP 246MW SOT23-3

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0 pcs On sales

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Product Attribute

ON Semiconductor MMUN2111LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2111LT1.

Resistor - Base (R1)
10 kOhms
Supplier Device Package
SOT-23-3 (TO-236)
Resistor - Emitter Base (R2)
10 kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Series
-
Current - Collector (Ic) (Max)
100mA
Packaging
Cut Tape (CT)
Current - Collector Cutoff (Max)
500nA
Part Status
Obsolete
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Power - Max
246mW
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Base Part Number
MMUN21**L

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